%0 Journal Article
%T Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes
%A Yang Hui
%A Chen Lianghui
%A Zhang Shuming
%A Chong Ming
%A Zhu Jianjun
%A Zhao Degang
%A Ye Xiaojun
%A Li Deyao
%A LIU Zongshun
%A Duan Lihong
%A Zhao Wei
%A Wang Hai
%A Shi Yongsheng
%A Cao Qing
%A Sun Jie
%A Chen Jun
%A Liu Suying
%A Jin Ruiqin
%A Liang Junwu
%A <br>Yang Hui
%A Chen Lianghui
%A Zhang Shuming
%A Chong Ming
%A Zhu Jianjun
%A Zhao Degang
%A Ye Xiaojun
%A Li Deyao
%A Liu Zongshun
%A Duan Lihong
%A ..
%J 半导体学报
%D 2005
%I 
%X Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor deposition method.The X-ray double-crystal diffraction rocking curve measurements show the fullwidth half maximum of 180″ and 185″ for (0002) symmetric reflection and (10-12) skew reflection,respectively.A room temperature mobility of 850cm2/(V·s) is obtained for a 3μm thick GaN film.Gain guided and ridge geometry waveguide laser diodes are fabricated with cleaved facet mirrors at room temperature under pulse current injection.The lasing wavelength is 405.9nm.A threshold current density of 5kA/cm2 and an output light power over 100mW are obtained for ridge geometry waveguide laser diodes.
%K metalorganic chemical vapor deposition
%K GaN-based laser diodes
%K multiple quantum wells
%K ridge geometry structure
%K threshold current density<br>有机化学气相沉积
%K GaN基激光器
%K 多量子阱
%K 脊形结构
%K 阈值电流密度
%K metalorganic
%K chemical
%K vapor
%K deposition
%K GaN-based
%K laser
%K diodes
%K multiple
%K quantum
%K wells
%K ridge
%K geometry
%K structure
%K threshold
%K current
%K density
%K 紫光激光器
%K 材料生长
%K 器件
%K Laser
%K Diodes
%K Fabrication
%K Device
%K Growth
%K output
%K light
%K power
%K threshold
%K current
%K density
%K Gain
%K ridge
%K geometry
%K waveguide
%K facet
%K mirrors
%K pulse
%K current
%K injection
%K film
%K room
%K temperature
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=679E19D6B0551E51&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=0B39A22176CE99FB&sid=3081401A9FAB9CE2&eid=84A93BA251D28205&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=13