%0 Journal Article
%T Analysis and Optimal Design of Novel SiGe/Si Heterojunction Switching Power Diodes<br>新型SiGe/Si异质结开关功率二极管的特性分析及优化设计
%A Gao Yong
%A Chen Botao
%A Yang Yuan
%A <br>高勇
%A 陈波涛
%A 杨媛
%J 半导体学报
%D 2002
%I 
%X The SiGe technology is applied to the performance improvement of power semiconductor devices and the novel structure of SiGe/Si heterojunction p i n switching power diodes is presented.On the basis of analyzing the structure mechanism,the device characteristics are simulated by Medici and the optimal design is carried out.The simulation results indicate that the SiGe/Si heterojunction switching power diodes have low forward voltage drop,low stored charge and the performance is much better than the similar structure of Si devices.Since there is no need to use lifetime killing technology for the performance improvement,it can be easily integrated into power IC.
%K SiGe/Si heterojunction
%K power losses
%K forward voltage drop
%K stored charge<br>SiGe/Si异质结
%K 功率损耗
%K 通态压降
%K 存贮电荷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=ED8AA8443CC20A3F&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=DF92D298D3FF1E6E&sid=B60458D1AE87BCD1&eid=3EE58D91F4253193&journal_id=1674-4926&journal_name=半导体学报&referenced_num=9&reference_num=7