%0 Journal Article
%T An Analytical Model for Polysilicon Quantization in MOS Devices<br>MOS器件多晶硅栅量子效应的解析模型
%A Dai Yuehu
%A Chen Junning
%A Ke Daoming
%A Sun Jiae
%A Xu Chao
%A <br>代月花
%A 陈军宁
%A 柯导名
%A 孙家讹
%A 徐超
%J 半导体学报
%D 2005
%I 
%X This paper proposes a model for polysilicon quantum effects in MOSFETs.Based on the least-squares curve fit,electron distribution functions are obtained.Then, solving Possion equations,a physically based analytical model is described.There are only two fitting parameters in the new model that can be used to describe different states such as accumulation,threshold,and strong inversion.However,different models used to depict those as different states,respectively.Additionally threshold voltages with the new model are calculated and compared with the numerical simulation results.The good agreement between them proves that the new model is correct and exact.
%K polysilicon
%K quantum effect
%K fitting parameter
%K screening length
%K potential distribution function
%K electrical field distribution function<br>多晶硅
%K 量子效应
%K 拟合参数
%K 屏蔽长度
%K 电势分布函数
%K 场强分布函数
%K 器件
%K 多晶硅栅
%K 量子效应
%K 解析模型
%K MOS
%K Devices
%K Quantization
%K Polysilicon
%K 模拟结果
%K 数值
%K 计算
%K 阈值电压
%K 利用
%K 统一
%K 简化
%K 状态模型
%K 拟合参数
%K 基于物理
%K 建摸
%K 泊松方程
%K 求解
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=CC3F6C0B9E308D10&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=708DD6B15D2464E8&sid=83988AB6331F63A8&eid=BF8433C728988BC0&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=8