%0 Journal Article
%T Interface Properties of Ga_(0.47)In_(0.53)As/SiO_2 and Ga_(0.47)In_(0.33)As/Al_2O_3<br>Ga_(0.47)In_(0.53)As/SiO_2与Ga_(0.47)In_(0.53)As/Al_2O_3的界面性质
%A Jian Ruolian/
%A <br>江若琏
%A 郑有炓
%A 傅浩
%A 邵建军
%A 黄善祥
%J 半导体学报
%D 1989
%I 
%X 本文研究了GaInAs/SiO_2与GaInAs/Al_2O_3的界面性质.采用PECVD技术以TEOS为源以及采用MOCVD技术以Al(OC_3H_1)_3为源在n~+-InP衬底的n-Ga_(0.47) In_(0.33)As外延层上淀积了/SiO_2和Al_2O_3,制备成MIS结构.结果表明这些MIS结构具有良好的C-V特性,SiO_2/GaInAs界面在密度最低达 2.4×10~(11)cm~2·eV~(?),氧化物陷阱电荷密度达10~(?)～10~(10)cm~2,观察到GaInAs/SiO,结构中的深能级位置为E_c-E_T=0.39eV.GaInAs/Al_2O_3结构中的深能级位置为E_c=E_T=0.41eV.
%K MIS Structures
%K Plasma-enhanced chemical vapor deposition
%K Metal organic chemical vapor deposition
%K C-V characteristics
%K Deep level transient spectroscopy
%K Interface state
%K Oxide trapped charge
%K Deep level<br>MIS结构
%K 等离子增强化学汽相淀积
%K 金属有机化合物化学汽相淀积
%K C-V特性
%K 深能级瞬态谱
%K 界面态
%K 氧化物陷阱电荷
%K 深能级
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F0F503528E4C0E2A&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=F3090AE9B60B7ED1&sid=547991B346A6585E&eid=04EA291949415E08&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0