%0 Journal Article
%T Study of Plasma Etching for Chrome Masking<br>等离子刻蚀铬膜的研究
%A Yang Minjie/
%A <br>杨民杰
%A 张骥华
%A 孙蓉
%A 卢平芳
%A 陈志强
%J 半导体学报
%D 1989
%I 
%X The basic principle of plasma etching for Chrome masking is presented.Theplasma is produeed under high frequency by means oi CCl_4 and air as the gaseoussourcls.The results is given in detail.
%K Plasma
%K Etching
%K Chrome masking<br>等离子体
%K 刻蚀
%K 铬膜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=BE00746636387B76&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=9CF7A0430CBB2DFD&sid=6452E1221020E61F&eid=FD6137FFCE59D193&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=2