%0 Journal Article
%T Study on Characteristics of Ultra-thin RTN SiO_2 Films<br>快速热氮化超薄SiO_2膜特性的研究
%A Wang Yongshun/Institute of Microelectronics
%A Qinghua Univeristy Xiong Daqing/Institute of Microelectronics
%A Qinghua Univeristy Li Zhijian/Institute of Microelectronics
%A Qinghua Univeristy
%A <br>王永顺
%A 熊大菁
%A 李志坚
%J 半导体学报
%D 1990
%I 
%X 本文主要研究了超薄快速热氮化(Rapid Thermal Nitridation)SiO_2膜在高电场下的电特性和抗辐照特性,采用AES和XPS等技术分析了RTN SiO_2膜的成份和结构。与同厚SiO_2膜相比,RTN SiO_2膜具有许多明显的优点,在同样条件下,当电场强度E≈1.5×10~7V/cm时,击穿时间t_(bd)比SiO_2的约高两个量级;在经过剂量高达10~7rad的Co~(60)辐照后,SiO_2膜的界面态密度及漏电流均增大1—2个量级,而RTN SiO_2膜的变化非常小。
%K Rapid thermal nitridation
%K Electron trap
%K High electic field
%K Breakdown time
%K Density of interface state
%K irradiation<br>SiO2膜
%K 热氮化
%K 电子陷阱
%K 击穿时间
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8B386B0A18766F385DE5C88770E92F71&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=5D311CA918CA9A03&sid=821800203AD09E7B&eid=20ED669EB429E15C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=5&reference_num=0