%0 Journal Article
%T LPE Growth and Characterization of AlGaAsSb Epilayers<br>Al_xGa_(1-x)As_ySb_(1-y)/GaSb的LPE生长与性质研究
%A Yang Baohua/Institute of Semiconductors
%A Academia Sinica
%A Beijing Wang Zhanguo/Institute of Semiconductors
%A Academia Sinica
%A Beijing Wan Shouke/Institute of Semiconductors
%A Academia Sinica
%A Beijing Gong Xiuying/Institute of Semiconductors
%A Academia Sinica
%A Beijing Lin Lanying/Institute of Semiconductors
%A Academia Sinica
%A Beijing
%A <br>杨保华
%A 王占国
%A 万寿科
%A 龚秀英
%A 林兰英
%J 半导体学报
%D 1990
%I 
%X 在GaSb衬底上用LPE法生长了晶格匹配的AlGaAsSb外延层。用室温光致发光和X射线双晶衍射分别测量了材料的禁带宽度和晶格常数,并与用内插法计算的结果进行了比较。用C-V和van der Pauw法测量了样品的电学参数。用激光喇曼散射和低温光致发光研究了材料的光学性质,观察到了类GaSb的LO模和类AlSb的LO模以及LO声子与等离子激元的耦合模L_-;对x=0.2,y=0.025的样品,由低温到室温的变温光致发光测量确定的禁带宽度的温度系数为-3.2×10~(-4)eV/K。此外对于晶格失配,P型的原因以及PL谱峰的展宽等问题进行了讨论。
%K LPE
%K AlGaAsSb/GaSb
%K Lattice mismatch
%K Raman scattering
%K Photoluminescence<br>LPE
%K 化合物光导体
%K 晶格匹配
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8B386B0A18766F3870DB32B4DB273D10&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=F3090AE9B60B7ED1&sid=0B52E912EAFE3700&eid=04EA291949415E08&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0