%0 Journal Article
%T Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP<br>非掺及掺铁磷化铟中的残留施主缺陷(英文)
%A Zhao Youwen
%A Sun Niefeng
%A SFung
%A CDBeling
%A Sun Tongnian
%A Lin Lanying
%A <br>赵有文
%A 孙聂枫
%A 冯汉源
%A C D Beling
%A 孙同年
%A 林兰英
%J 半导体学报
%D 2002
%I 
%X The free electron concentration of as-grown liquid encapsulated Czochralski (LE C) InP measured by Hall effect is much higher than the concentration of net dono r impurity determined by glow discharge mass spectroscopy.Evidence of the existe nce of a native donor hydrogen-indium vacancy complex in LEC undoped and Fe-do ped InP materials can be obseved with infrared absorption spectra.The concentra tion increase of the donor complex correlates with the increase of ionized deep acceptor iron impurity Fe concentration in Fe-doped semi-insulating (S I) InP.These results indicate that the hydrogen-indium vacancy complex is an im portant donor defect in as-grown LEC InP,and that it has significant influence on the compensation in Fe-doped SI InP
%K indium phosphide
%K semi-insulating
%K donor defect<br>磷化铟
%K 半绝缘
%K 施主缺陷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2B8A21208CB2AE00&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=94C357A881DFC066&sid=366B1248A15658C5&eid=D9202C57BAB9096F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13