%0 Journal Article
%T Multiple Quantum Well Laser Prepared by Molecular Beam-Epitaxy and Device Characteristics<br>GaAs/AlGaAs多量子阱激光器
%A Zhang Yonghang/Institute of Semiconductors
%A Academia Sinica
%A <br>张永航
%A 孔梅影
%A 陈良惠
%A 王启明
%J 半导体学报
%D 1989
%I 
%X Multiple quantum well lasers have been made by a home-made molecular-beam-epitaxysystem.At room temperature, the best threshold current density of the broad-area contact de-vice is 3000 A/cm~2, and proton bombarded stripe geometry MQW laser has a threshold cur-rent of 128 mA. Single longitudinal mode operation is also observed in a wide current in-jection range. The highest external differential quantum efficiency is 34% per facet,basingwavelengths are in the range from 8590A to 8640A and far-field optical intensity distributionexhibits a single peak.The characteritic temperature is 202 K at the temperatures near 300 K.The details of molecular beam epitaxial procedures and growth conditions for MQW laser arealso reported.The investigations on grown materials and devices have shown that the grownAlGaAs materials,especielly the doped AlGaAs, are not ideal and result in a not very lowthreshold current density.
%K Molecular-beam-epitaxy
%K Quantum well
%K Semiconductor laser<br>分子束外延
%K 量子阱
%K 半导体
%K 激光器
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=813718DD7CB9882D&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=F3090AE9B60B7ED1&sid=E339BF74025BB291&eid=8225A9F184D4F1CA&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1