%0 Journal Article
%T An Improved Model and Method of Calculating the VLSI Critical Area<br>一种改进的VLSI关键面积计算模型和方法
%A MA Pei-jun
%A HAO Yue
%A KOU Yun
%A <br>马佩军
%A 郝跃
%A 寇芸
%J 半导体学报
%D 2001
%I 
%X Fault mechanism of available critical area model is studied.An improved fault-kernel of open/short defect is presen- ted, which is suitable for the critical area calculation of general VLSI layout structure.It is important to the calculation of VLSI critical area and the optimization of IC layout design.
%K defect
%K critical area
%K yield<br>缺陷
%K 关键面积
%K 成品率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=271FD0FEB0AA8504&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=9CF7A0430CBB2DFD&sid=E477FFDBDE309A4B&eid=DB29DCDE63A11F6A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=9