%0 Journal Article
%T Simulation of Ballistic Transport Including S/D Tunneling for DG MOSFET<br>考虑源漏隧穿的DG MOSFET弹道输运及其模拟
%A Zheng Qitong
%A Zhang Dawei
%A Jiang Bo
%A Tian Lilin
%A Yu Zhiping
%A <br>郑期彤
%A 张大伟
%A 江波
%A 田立林
%A 余志平
%J 半导体学报
%D 2004
%I 
%X The source to drain (S/D) tunneling current is included based on the ballistic transport model in this work,using WKB method to calculate the possibility of tunneling.The device performances of DG (dual gate) MOSFETs with very thin silicon films (thickness of 1nm) are simulated.The simulation results show that when the channel length is 10nm,the S/D tunneling is 25% of the total off current and 5% of the total on current.The proportion of the S/D tunneling will be even larger with the channel length going down.Thus,it is essential to include S/D tunneling into simulations.
%K S/D tunneling
%K DG MOSFET
%K ballistic transport
%K device simulation<br>源漏隧穿
%K DG
%K MOSFET
%K 弹道输运
%K 器件模拟
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2A12F635D76BC63A&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=94C357A881DFC066&sid=4002B7787911C73B&eid=CEFF71AEB051114C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8