%0 Journal Article
%T Effect of Thermal Stress on Dislocations in GaAs Single Crystal During Annealing Process by Triple Axis Mode X-Ray Diffraction<br>GaAs高温退火过程中热应力对晶体缺陷的影响
%A Li Jianming
%A Tu Hailing
%A Hu Guangyong
%A Wang Chaoqun
%A Zheng Ansheng
%A Qian Jiayu
%A <br>黎建明
%A 屠海令
%A 胡广勇
%A 王超群
%A 郑安生
%A 钱嘉裕
%J 半导体学报
%D 2003
%I 
%X Effect of thermal stress on dislocations in GaAs single crystal during high temperature annealing is investigated by triple axis mode X-ray diffraction.The results show that thermal stress leads to high density of dislocations because of plastic deformation in the region of GaAs single crystal wafer contacted with graphite.Impelled by elastic stress field,edge dislocations move and rearrange perpendicularly to the slip plane,and they become subgrain boundaries.And the lattice parameter and orientation of GaAs single crystal are both changed.
%K GaAs
%K annealing
%K subgrain boundary
%K triple axis mode X-ray diffraction<br>GaAs
%K 退火
%K 小角晶界
%K 三轴晶模式衍射
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F4536499BF86C1B5&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=9CF7A0430CBB2DFD&sid=3C5A0072CBF0FE42&eid=66973F362693F62B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=17