%0 Journal Article
%T Two-Dimensional Numerical Scheme for SOI CMOS Gate<br>一种二维SOI CMOS门级瞬态数值模型
%A Du Min/
%A <br>杜敏
%A 黄敞
%J 半导体学报
%D 1991
%I 
%X A two-dimensional integrated numerical model is developed for SOI CMOS gate. Theterminal current and terminal voltage of SOI inverter are directly related to carrier transport.Based on this model, the transient behavior of submicron SOI CMOS inverter has been simul-ated accurately and the physical insight has been shown clearly.A novel scheme,alternatingdirection method, is used to convert the twodimensional equation into two one-dimensional pro-blems within two adjacent time points.A dynamic two step iteration method is provided to en-sure the simulation to converge and reduce CPU time efficiently. As the specific examples,theeffect of the excess minority carriers upon transient performance of the SOI CMOS inverterhas been illustrated The effect of radiation and leakage current can also be calculated by us-ing the simulator.This circuit simulator is very useful for high performance submicron SOICMOS gate design.
%K Numerical scheme
%K SOI CMOS
%K Submicron device
%K Folating body effect Transient simulation<br>SOI
%K CMOS
%K 半导体器件
%K 瞬态模拟
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E731B0401E4F079B&yid=116CB34717B0B183&vid=59906B3B2830C2C5&iid=0B39A22176CE99FB&sid=74011071555EB4E5&eid=D767283A3B658885&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=4