%0 Journal Article
%T Simulation on Structure and Performance of Grooved-Gate NMOSFET<br>槽栅NMOSFET结构与性能仿真
%A REN Hong-xia
%A <br>任红霞
%A 郝跃
%A 许冬岗
%J 半导体学报
%D 2001
%I 
%X The effects of structure on the performance of deep sub micron NMOSFET have been studied based on the hydrodynamic model by two dimensional device simulator MEDICI and compared with those of the counterpart conventional planar device.The simulated structure parameters include the junction depth,concave corner and channel effective length.Simulation results prove that grooved gate device can deeply suppress the short channel effect and hot carrier effect even in the deep sub micron region,but its current drive ability is smaller than that of a planar device.The simulation also indicates that the performance is strongly influenced by the concave corner and channel length of the grooved gate MOSFET.
%K grooved
%K gate NMOSFET
%K structure parameter
%K characteristics of device<br>槽栅NMOSFET
%K 结构参数
%K 器件特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E51FF58C8FB94C5A&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=0B39A22176CE99FB&sid=D9AE183D3F5C3C75&eid=C812B90E96151014&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=7