%0 Journal Article
%T Analytical Calculation of Avalanche Breakdown Parameters in High-Voltage Diffused p-n Junction<br>高压扩散结雪崩击穿参量的解析计算
%A Liang Sujun/Xi''''an Jiaotong UniversityLuo Jinsheng/Xi''''an Jiaotong University
%A <br>梁苏军
%A 罗晋生
%J 半导体学报
%D 1991
%I 
%X By using a specialized exponential profile approximation, the analytical expressions ofideal avalanche breakdown parameters for high-voltage diffused p-n junction are found forthe first time. The calculated results coincide well with the full numerical ones obtained by V.A.K. Temple and M.S.Adler and are much more accurate than the results by using one-sidedabrupt and linearly graded profile approximation. The presented method can be used for notonly analysis and design of JTT but also punch-through evaluation in many modern powersemiconductor devices and analytic calculation of the barrier capacitance in diffused p-n ju-nction.
%K p-n junction
%K Avalanche breakdown
%K Poisson's equation
%K Analytical method<br>P－n结
%K 雪崩击穿
%K 计算
%K 参量
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E3A0071031929916&yid=116CB34717B0B183&vid=59906B3B2830C2C5&iid=0B39A22176CE99FB&sid=B9704B40A4225A24&eid=9C65ADEB5990B252&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=0