%0 Journal Article
%T Interaction between Hydrogen Molecule and Vacancy-Type Defects in c-Si<br>硅中氢分子和空位型缺陷间的相互作用
%A Shi Tiansheng/
%A <br>施天生
%A 白国仁
%J 半导体学报
%D 1989
%I 
%X The energy of interaction between hydrogen molecule and vacancy-type defects in crystal-line silicon is calculated using MNDO method and a series of model silicon crystals.It is con-cluded that the hydrogen molecule and the vacancy-type defects in silicon tend to trap eachother and that the hydrogenated vacancy-type defects serve as the nuclei of precipitation for bothhydrogen and vacancy in silicon.
%K Silicon
%K Hydrogen
%K Defect<br>硅
%K 氢
%K 缺陷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=76797BCFBDD62BBD&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=DF92D298D3FF1E6E&sid=B4F9D541F855CF96&eid=8DBE05486163BAB2&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=2