%0 Journal Article
%T Alloy Disordered Splitting of Fe-Levels in GaAsP<br>GaAsP混晶中Fe杂质能级的无序分裂
%A Huang Qisheng/
%A <br>黄启圣
%J 半导体学报
%D 1989
%I 
%X A simplified theoretical calculation is described for the regular Change of the S(x), the ra-tio of the hole photoionization cross sections between ground states and excited states of Fe-centers in GaAsP.It is believed that it is due to the alloy disordered splitting of Fe-levels.
%K Deep impurity Center
%K Alloy semiconductor
%K Alloy disorder<br>深杂质中心
%K 混晶半导体
%K 混晶无序
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F4D8C50CE97B0A01&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=DF92D298D3FF1E6E&sid=4AB4178709047BE3&eid=AF4A4411BB448A36&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0