%0 Journal Article
%T Forming of Very Shallow Junction for S/D Extension in Deep Sub-Micron CMOS Devices<br>Forming of Very Shallow Junction for S/D Extension in Deep Sub- Micron CMOS Devices
%A YIN Hua-xiang
%A XU Qiu-xia
%A <br>殷华湘
%A 徐秋霞
%J 半导体学报
%D 2000
%I 
%X Very shallow junctions for S/D extension in deep sub\|micron CMOS devices are required to suppress the short channel effect as devices scaling down,and the surface concentrations ( N s) of these junctions need to be kept in a higher value to reduce the series resistance of the lightly doped drain structure.But it is very difficult for the conventional ion implantation to meet the requirement above.This article presents the results of forming very shallow and ultra\|shallow junctions used in 0.25 micron ...
%K shallow junction
%K implantation
%K S/D extension
%K LEI
%K PAI
%K armophization
%K SIMS<br>CMOS
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B30CC72AB76B7C4C&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=DF92D298D3FF1E6E&sid=826ED638BDB6F0D0&eid=9107B2E171152411&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10