%0 Journal Article
%T Design and Realization of Resonant Tunneling Diodes with New Material Structure
%A Abstract
%A <br>Wang Jianlin
%A Wang Liangchen
%A Zeng Yiping
%A Liu Zhongli
%A Yang Fuhu
%A and Bai Yunxia
%J 半导体学报
%D 2005
%I 
%X A new material structure with Al 0.22Ga 0.78As/In 0.15Ga 0.85As/GaAs emitter spacer layer and GaAs/In 0.15- Ga 0.85As/GaAs well for resonant tunneling diodes is designed and the corresponding device is fabricated.RTDs DC characteristics are measured at room temperature. Peak-to-valley current ratio and the available current density for RTDs at room temperature are computed.Analysis on these results suggests that adjusting material structure and optimizing fabrication processes will be an effective means to improve the quality of RTDs.
%K resonant tunneling diodes
%K quantum effect
%K DC characterization<br>共振隧穿二极管
%K 量子效应
%K 直流特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=259099147F9951A5&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=CA4FD0336C81A37A&sid=CA4FD0336C81A37A&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=12