%0 Journal Article
%T Fabrication of a Bis (8-hydroxyquinoline) Zinc Amorphous-Film Device and Switching Effect<br>八羟基喹啉锌非晶薄膜器件的制备和开关特性
%A Shi Junpeng
%A Wen Zhenchao
%A Song Chang''''an
%A Chen Yin
%A Peng Yingquan
%A <br>时军朋
%A 温振超
%A 宋长安
%A 陈殷
%A 彭应全
%J 半导体学报
%D 2005
%I 
%X The structure and fabrication of a Bis (8-hydroxyquinoline) zinc amorphous-film device are introduced by analysis of X-ray diffraction.The state of the Znq_2 film is confirmed by using an I-V curve.The switching effect of the Znq_2 film is obtained.We explain it using a molecular arrangement.
%K Znq_2
%K switching effect
%K X-ray diffraction
%K I-V curve<br>八羟基喹啉锌
%K 开关特性
%K X射线衍射
%K I-V特性曲线
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2F0774E2444EF705&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=F3090AE9B60B7ED1&sid=8C8371356FB4C85C&eid=3F3D540C9B7906DE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=16