%0 Journal Article
%T Investigations on Optical Properties of GaInAs/AlInAs Multiple Quantum Well Heterostructures<br>GaInAs/AlInAs多量子阱结构光学性质的研究
%A Jiang Desheng/National Laboratory of Superlattices
%A Microstructures
%A Institute of Semiconductors
%A BeijingLi Fong/National Laboratory of Superlattices
%A Microstructures
%A Institute of Semiconductors
%A BeijingZhang Yonghang/Max-Planck-Institute fur Festkoperforschung
%A StuttgartKlaus Ploog/Max-Planck-Institute fur Festkoperforschung
%A Stuttgart
%A <br>江德生
%A 李锋
%A 张永航
%A K.Ploog
%J 半导体学报
%D 1991
%I 
%X The optical properties of GaInAs/AllnAs all-ternary multiple quantum well heterostru-ctures (MQWH), lattice-matched to InP substrate,are investigated.The low temperature abso-rption,photoluminescence (PL), PL excitation spectra and the temperature dependence oftransmission spectra are measured for the MQWH samples with different well widths.Thedetected PL peaks from MQWH samples are mainly due to transition processes related to de-fect states. However, up to room temperature the intrinsic heavy-and light-hole exciton peaksare still well observed in the absorption spectra, showing clearly the two-dimensional characterOf the electronic states. The red shift of inter-subband transition energies with increasing tem-perature is determined and explained. The calculation of subband energies by Kronig-Penneymodel indicates that, in order to get a satisfactory fitting to the measured values it is nessesaryto take the non-parabolicity of conduction and valence bands into account. In connectionwith X-ray double crystal diffraction measurements,structural parameters as layer thiskness,residual strains and the composition homogeneities are analysed.
%K GaInAs/AlInAs
%K Quantum well
%K photoluminescence
%K absorption<br>GaInAs
%K AlInAs
%K 量子阱
%K 光致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=1042E3F8004AA8C1&yid=116CB34717B0B183&vid=59906B3B2830C2C5&iid=38B194292C032A66&sid=58F693790F887B3B&eid=3986B25773CB6C30&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=4