%0 Journal Article
%T Analytical Model of Subthreshold Current for Short Channel MOSFET<br>短沟道MOS FET亚阈值电流的解析模型
%A Chen Dengyuan/Fudan University
%A ShanghaiTang Tingao/Fudan University
%A ShanghaiCarlos Araujo/University of Colorado at Colorado Springs
%A U SA
%A <br>陈登元
%A 汤庭鳌
%A C.A.Paz de Araujo
%J 半导体学报
%D 1989
%I 
%X The analytical solution of two-dimensional Poisson's Equation has been used to obtain theanalytical model of subthreshold current for short channel MOSFET.In the scope of weak in-version area, the analytical solution is in good accordance with the numerical reset.
%K Threshold Voltage
%K Subthreshold Current
%K Surface Potential<br>亚阈值电流
%K 表面势
%K 短沟道
%K MOSFET
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=71FE90CD1688F307A91833D23DAF41AF&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=DF92D298D3FF1E6E&sid=4002B7787911C73B&eid=385E3C2062167B88&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1