%0 Journal Article
%T Investigation of Rapid Thermally Nitrided-SiO_2/Si Interface with Conductance Technique<br>利用电导技术研究快速热氮化二氧化硅与硅界面的性质
%A Liu Zhihong/
%A <br>刘志宏
%A 马志坚
%A 黎沛涛
%A 郑耀宗
%A 刘百勇
%J 半导体学报
%D 1991
%I 
%X The device-quality SiO_2 films with a thickness of 15 nm have been nitrided in NH_3 byrapid thermal processing technique.The properties of the interface between these films andSi substrate were investigated by conductance technique using a measurement system equippedwith precision lock-in amplifier. The results show that the nitridation increases the densityand time constant of interface states,enhances the fluctuation of surface potential, but chang-es the hole capture cross-section only slightly.Especially, nitridation introduces a peak of in-terface states at 0.25 eV below midgap and the energy dependency of hole capture cross-sec-tion is suppressed. Using a patchwork model, the surface potential fluctuation can be well si-mulated and a surface charge nonuniformity with a long-way length distribution may exist.These are consistent with the fact that nitridation induces a high oxide charge density.Theexperimental data show that all these properties depend on nitridation time and temperature.
%K Thin insulator
%K Thermally nitrided SiO_2
%K Conductance technique
%K Interface<br>二氧化硅
%K 电导技术
%K 界面
%K 热氮化
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0A139050ECFDA68F&yid=116CB34717B0B183&vid=59906B3B2830C2C5&iid=CA4FD0336C81A37A&sid=D3E34374A0D77D7F&eid=933658645952ED9F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=5