%0 Journal Article
%T Deep-Trench Termination of Bipolar RF Power Devices<br>双极RF功率管的深阱结终端
%A 周蓉
%A 胡思福
%A 李肇基
%A 张庆中
%J 半导体学报
%D 2003
%I 
%X A new deep trench junction termination is proposed.The simulation analysis indicates,deep trench junction termination with certain width,certain depth and filling with isolated dielectrics can increase the avalanche breakdown voltage of bipolar RF power devices to above 95% of the ideal values;experimental results prove the BV CBO of the devices DCT260 with deep trench junction termination are 94% of the ideal values,add up to 14% than that with traditional termination structure.Compared with traditional termination structure,deep trench termination structure does not reduce dissipation area but decreases collector junction area and leakage current,and the f T and K P of RF power devices DCT260 are improved 33% and 1dB respectively.
%K bipolar RF power devices
%K deep
%K trench junction termination
%K avalanche breakdown voltage
%K filling dielectric<br>双极RF功率管
%K 深阱结终端
%K 击穿电压
%K 填充介质
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=12BE2BA61D977A90&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=E158A972A605785F&sid=7D6CD8918B045FD4&eid=8ACD9060100C26F1&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=11