%0 Journal Article
%T Passivation Effect and Oxygen Adsorption of Si(100)-As Surface<br>Si(100)—As表面钝化作用和氧吸附
%A ZHONG Zhantian/Institute of Semiconductors
%A Lab for Surface Physics
%A Academia Sinica
%A Beijing
%A ChinaWANG Dawen/Institute of Semiconductors
%A Lab for Surface Physics
%A Academia Sinica
%A Beijing
%A ChinaFAN Yue/Institute of Semiconductors
%A Lab for Surface Physics
%A Academia Sinica
%A Beijing
%A ChinaLI Chengfang/Institute of Semiconductors
%A Lab for Surface Physics
%A Academia Sinica
%A Beijing
%A China
%A <br>钟战天
%A 王大文
%A 范越
%A 李承芳
%J 半导体学报
%D 1990
%I 
%X 利用自己研制的具有分子束外延系统的表面分析联合谱仪研究了氧与Si(100)—As表面的相互作用。本文进一步证实了As层是Si表面的很好的钝化层,并首次研究了Si(100)—As表面的氧吸附全过程。实验表明,氧的饱和覆盖量为0.5单原子层,即Si表面上存在As原子层而使吸附位置减少一半。另外,通过吸附动力学分析得知,Si(100)—As表面的初始粘附系数是5.6×10~(-3),比清洁的Si(100)表面小一个数量级。Si表面上As的钝化作用是Si原子的悬挂键态被As原子的占有孤立对态代替而形成。
%K Si(100)-As surface
%K Passivation effect
%K Oxygen Adsorption
%K Sticking Coefficient<br>Si(100)-As表面
%K 钝化效应
%K 氧吸附
%K 粘附系数
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8AA50AE1D0E00190&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=0B39A22176CE99FB&sid=DBF54A8E2A721A6D&eid=4DB1E72614E68564&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0