%0 Journal Article
%T Effect of Indium Content on Structural and Photoluminescent Properties of Doped ZnO Thin Films<br>In掺杂对ZnO薄膜结构及光学特性的影响
%A Peng Xingping
%A Wang Yinyue
%A Fang Zebo
%A Yang Yinghu
%A <br>朋兴平
%A 王印月
%A 方泽波
%A 杨映虎
%J 半导体学报
%D 2005
%I 
%X Indium-doped zinc oxide films with c-axis preferred orientation and small lattice mismatch are deposited on silicon substrates by RF co-reactive sputtering.A blue-violet photoluminescent bi-peaks located at about 415nm and 430nm are observed when excited with 340nm light at room temperature.The effect of In doping on the structural and photoluminescent properties of ZnO thin films is investigated.It is found that the sample has a highly c-axis orientation and small lattice mismatch (0.16%) and a stronger blue-violet emission bi-peak at 415nm and 433nm in PL spectra when the percentage area of indium slices is 3%.
%K ZnO films
%K In-doped
%K photoluminescence
%K RF co-reactive sputtering<br>ZnO薄膜
%K In掺杂
%K 光致发光谱
%K 射频反应溅射
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=96273F6D6D81050A&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=E158A972A605785F&sid=FD6137FFCE59D193&eid=EB8E83807F36F05B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=5&reference_num=15