%0 Journal Article
%T Kinetic Monte Carlo Simulation of InAs Quantum Dots Growth Pause on GaAs Patterned Substrate<br>GaAs图形衬底上InAs量子点生长停顿的动力学蒙特卡罗模拟
%A He Wei
%A HAO Zhibiao
%A Luo Yi
%A <br>何为
%A 郝智彪
%A 罗毅
%J 半导体学报
%D 2005
%I 
%X The self-organized growth of InAs quantum dots on patterned GaAs substrate,especially the influence of growth pause on the characteristics of quantum dots is studied with Kinetic Monte Carlo method.The patterned substrate is described by the distribution of surface energy.The simulation results show that an appropriate pause time tends to make the quantum dots more uniform and regular,hence facilitating site-control of quantum dots.
%K Kinetic Monte Carlo simulation
%K quantum dots
%K epitaxial growth<br>动力学蒙特卡罗模拟
%K 量子点
%K 外延生长
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5596DC31601D789F&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=E158A972A605785F&sid=E008F9AD6D4B96EF&eid=2868AE484E7BAD6B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=12