%0 Journal Article
%T Magnetization of Narrow GaP Semimagnetic Semiconductor Hg_(1-x)Mn_x Te<br>窄禁带半磁半导体Hg_(1-x)Mn_xTe的磁化强度
%A Chen Chenjia/
%A <br>陈辰嘉
%A 王学忠
%A 刘继周
%A R.R.Galazka
%J 半导体学报
%D 1989
%I 
%X The magnetization measurements of Hg_(1-x)Mn_xTe for samples with x=0.06,0.08, 0.12,0.16 in the temperature range 1.5K to 30K and magnetic fields up to 7T have been carried outby using the extraction method.Based on the mean field theory,a modified Brillouin func-tion is fitted with the data very well over the entire range.The inverse susceptibility is showna Curie-Weiss behavior even at high field with a paramagnetic Curie temperature and indica-tes that there is an antiferromagnetic exchange coupling among Mn ions.
%K Magnetization
%K Narrow-gap semimagnetic semiconductor
%K Exchange interaction
%K Mn~(++) ions cluster
%K Modified Brillouin function<br>磁化强度
%K 窄禁带
%K 半磁半导体
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=539689173804C253&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=DF92D298D3FF1E6E&sid=2A2AA8B7E19F0DF7&eid=FF58680609C9D068&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1