%0 Journal Article
%T Computer Simulation of the Ion Beam Enhanced Deposition of Silicon Nitride Films<br>离子束增强沉积制备氮化硅薄膜的计算机模拟
%A Zhou Jiankun/Ion Beam Laboratory
%A <br>周建坤
%A 陈酉善
%A 柳襄怀
%A 杨根庆
%A 邹世昌
%J 半导体学报
%D 1989
%I 
%X A Monte-Carlo computer simulation code,SIBL,has been developed to describe the growthof silicon nitride films by ion beam enhanced deposition (IBED).The universal potential andthe electronic stopping by ZBL (1985) are used in the code.A successive and alternate process.of deposition of silicon and implantation of nitrogen ions has been applied to simulate the ac-tual continuous and synchronous process of IBED.The changes of the composition and thedensity profile are taken into account during film growth both due to the spatial distribution oftarget atoms deposited in collision cascades,and due to the presence of the implanted ions. The relationship between the calculated composition of the film and the atomic arrival ra-tio N/Si has been established.The composite profile obtained by compputer simulation is in,good agreement with the experimental results.
%K Ion beam enhanced deposition
%K Silicon nitride
%K computer simulation<br>离子束
%K 氮化硅
%K 薄膜
%K 计算机模拟
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A65B7660DE2FC07F&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=DF92D298D3FF1E6E&sid=89389F643CA3F778&eid=500A64A3035F6B9C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=0