%0 Journal Article
%T A Pd-Ir Alloy Gate MOS Transistor Sensitive to Ammonia<br>氨气敏Pd-Ir合金栅MOS晶体管
%A Zhang Weixin/
%A <br>张维新
%A 赵玲娟
%J 半导体学报
%D 1989
%I 
%X A new MOS field effect transistor sensitive to ammonia has been reported.The gate ofMOS transistor consists of Pd-Ir alloy film.The sensitivity and selectivity of the devices areperfect.The mechanism of sensitivity to ammonia has been explained.
%K Sensitive to ammonia
%K MOS transistor
%K Pd-lr alloy gate
%K Selectivity
%K Sensitivity<br>氨气敏
%K MOS晶体管
%K 合金栅
%K Pd－Ir
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=71FE90CD1688F307FF868599416D099A&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=9CF7A0430CBB2DFD&sid=C19D5524C51D7FE4&eid=C3BC38F6CC09E835&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0