%0 Journal Article
%T MOCVD Growth of Cubic AlxGa1-xN/GaAs(100)<br>立方相Al_xGa_(1-x)N/GaAs(100)的MOCVD外延生长
%A Feng Zhihong
%A Yang Hui
%A Xu Dapeng
%A Zhao Degang
%A Wang Hai
%A Duan Lihong
%A <br>冯志宏
%A 杨辉
%A 徐大鹏
%A 赵德刚
%A 王海
%A 段俐宏
%J 半导体学报
%D 2002
%I 
%X Cubic Al x Ga 1-x N films with good quality are grown on the GaAs(100) substrates by metallorgaic chemical vapor deposition (MOCVD).Photoluminescence (PL) and scanning electron microscope (SEM) are used to analyze the crystalline quality and the surface morphology of the epitaxial layers.It is found that both the relatively big fluxes of NH 3 and the relatively high growth temperature will improve the quality of crystalline and the surface morphology of cubic Al x Ga 1-x N films.
%K MOCVD
%K cubic AlGaN
%K PL
%K SEM
%K suboxide<br>MOCVD
%K 立方相AlGaN
%K 光致发光
%K 扫描电镜
%K 低值氧化物
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=1F162C4ADE1C692F&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=0B39A22176CE99FB&sid=8575BEDA702C4B7C&eid=F260CE035846B3B8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=6