%0 Journal Article
%T Current-Voltage and Capacitance Characteristics of Modulation-Doped Field Effect Transistors<br>调制掺杂场效应管的电容和伏-安特性
%A Deng Shenggui/Institute of Scmiconductors
%A Academia Sinica
%A <br>邓生贵
%J 半导体学报
%D 1990
%I 
%X 本文考虑了费米能级随栅电压的变化,得到调制掺杂场效应管的栅极与沟道的实际距离增大90A左右,从而引起栅极电容和跨导的明显减少;又用热电子模型推导了调制掺杂场效应管的伏-安特性,得到的结果为其它文献所证实。
%K MODFET
%K capacitance
%K output characteristic<br>调制掺杂
%K 场效应管
%K 电容
%K 伏安特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8B386B0A18766F38CE88DA4CF730106C&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=DF92D298D3FF1E6E&sid=68FF5306A8F9C315&eid=E3D3D8D1B650AE1E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0