%0 Journal Article
%T Full Band Monte Carlo Simulation of Electron Transport in Ge with Anisotropic Scattering Process
%A RAVAIOLI Umberto
%A Chen Yong
%A RAVAIOLI Umberto
%A <br>Chen
%A Yong
%A an
%A Ravaioli
%A Umberto
%J 半导体学报
%D 2005
%I 
%X The electron transport properties in Ge are calculated by full band Monte Carlo technique with anisotropic scattering consideration.The calculation procedures are as follows:the full band structure is calculated by nonlocal empirical pseudopotential approach;the relative value of density of state (DOS) is computed by counting the number of states located in a certain region of the energy;the phonon dispersion curve is obtained from an adiabatic bondcharge model;the electron-phonon scattering rates are approximated by the nonparabolic model derived from Fermi’s golden rule at low energy region and scaled by DOS at higher energy region;the energy and momentum conservations are employed for choosing the final state after scattering.The validity of this Monte Carlo simulator and the physical models that are used is fully confirmed by comparing the program output to experimental results listed in references.As this Monte Carlo model can accurately reproduce the velocity and energy characteristics of electrons in Ge and the DOS scaled scattering rate can significantly reduce the computational cost for scattering rates,this approach is suitable for device simulation.
%K 蒙特卡洛模拟
%K 费米黄金律
%K 输运特性
%K 锗
%K Monte
%K Carlo
%K simulation
%K Fermi's
%K golden
%K rule
%K transport
%K properties
%K Ge
%K 各项异性
%K 散射
%K 电子输运
%K 全能带
%K 蒙特卡洛模拟
%K Scattering
%K Process
%K Anisotropic
%K Electron
%K Transport
%K Monte
%K Carlo
%K Simulation
%K Band
%K device
%K simulation
%K validity
%K simulator
%K physical
%K models
%K used
%K comparing
%K program
%K output
%K experimental
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=621F3FD3A00DACA6&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=38B194292C032A66&sid=BC88D6B0750E09D1&eid=DCE57F652E4ADAFC&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13