%0 Journal Article
%T Modeling on 2-D Direct Tunneling Current in Ultra-Thin Oxide nMOSFET''''s Considering Quantum Mechanics<br>考虑量子力学效应的超薄栅氧nMOSFET''s直接隧穿电流二维模型
%A Chen Lifeng
%A Ma Yutao
%A Tian Lilin
%A <br>陈立锋
%A 马玉涛
%A 田立林
%J 半导体学报
%D 2002
%I 
%X Modeling of DT(direct tunneling) current in ultra- thin gate oxide n MOSFET's is researched.Quantized energy lev- els under the high electron field are calculated with the modified Airy function(MAF) m ethod and the tunneling probability of electrons through the gate oxide is obtained through the modified WKB(MWKB) method.From these the distribution of DT current is computed.2 - D sim ulation of MOSFET's is realized in this m odel,and it can be used to sim ulated device status under various biases.Com parison of sim ulating results with experimental data verifies the validity of the m odel.And the efficiency is much higher than the complete analytical m ethod.With this model the gate DT current characteristics of deep- m icron MOS devices can be predicted with satisfaction.
%K MOSFET's
%K quantum effects
%K gate tunneling current
%K device modeling<br>MOSFET's
%K 量子效应
%K 栅隧穿电流
%K 器件模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F8AD4523F2C64091&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=E158A972A605785F&sid=A4E67967A1AB25F0&eid=F27A401E323B6FAD&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13