%0 Journal Article
%T Optimization Design and Characteristics of Lightly Doped Drain-Source (LDD) Thin Film Transistors (TFTs)<br>多晶硅薄膜晶体管源漏轻掺杂结构的优化设计
%A Li Muju
%A Yang Bailiang
%A <br>李牧菊
%A 杨柏梁
%J 半导体学报
%D 2002
%I 
%X 应用场助热电子发射 (thermionic field em ission)模型合理地分析了多晶硅薄膜晶体管中显著漏电流与器件参数及电极电压等因素间的内在关系 ,讨论了源漏轻掺杂结构在抑制漏电流方面的物理机制 ,并给出轻掺杂结构参数 (如轻掺杂浓度、轻掺杂区域长度等 )的优化设计 ,为多晶硅薄膜晶体管的器件设计提供了可靠的理论依据.
%K thin film transistor
%K therm al field em ission<br>薄膜晶体管
%K 热电子发射
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=59C3B26F1B7ED419&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=E158A972A605785F&sid=3081401A9FAB9CE2&eid=6B3068A7C27BD349&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8