%0 Journal Article
%T Effect of Surface State and S/D Resistance on Characteristics of 6H-SiC PMOSFET
表面态密度分布和源漏电阻对6H-SiC PMOS器件特性的影响
%A Gao Jinxia
%A Zhang Yimen
%A Zhang Yuming
%A Tang Xiaoyan
%A
郜锦侠
%A 张义门
%A 张玉明
%A 汤晓燕
%J 半导体学报
%D 2002
%I
%X A m odel of the interface state density distribution near by valence band is presented.The dependence of the thresh- old voltage on temperature,C- V characteristics and the transfer characteristics for 6 H - Si C PMOS devices is predicted exactly with this m odel.Theoretical C- V curve is obtained by calculating the Poisson equation num erically considering the effects of field- induced ionization.The sheet resistances and contact resistances for p+- type Si C source/drain region are significantly high,so they m ust be considered when the drain current in strong inversion is calculated.
%K Si C
%K PMOS
%K interface state
%K threshold voltage
%K S/D resistance
SiC
%K PMOS
%K 界面态
%K 阈值电压
%K 源漏电阻
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E5760B019AA8EE09&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=E158A972A605785F&sid=A53D7AA35F9929AF&eid=09AA1448D1EAF9C1&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=13