%0 Journal Article
%T Photoluminescence of Mg-Implanted GaN<br>氮化镓注镁(Mg:GaN)的光致发光
%A Xie Shiyong
%A Zheng Youdou
%A Chen Peng
%A Zhang Rong
%A Zhou Yugang
%A <br>谢世勇
%A 郑有炓
%A 陈鹏
%A 张荣
%A 周玉刚
%J 半导体学报
%D 2002
%I 
%X Room temperature photoluminescence of Mg implanted GaN grown on sapphire by low pressure metalorganic chemical vapor deposition (LP MOCVD) is studied.Clear blue emission and broad yellow band are observed.The fine structure of Mg related energy levels in GaN is suggested that transition from Mg i with energy level at 170meV which is below conduction band to Mg Ga with acceptor energy level at 250meV which is above valence band is responsible for the blue emission of 415nm,and the transition from the former level to the energy level at 390meV which is above valence band,as well as the transition from the energy level of the nearest neighbor associated of a Mg Ga acceptor with a nitrogen vacancy,at 310meV which is below conduction band, to the spatially separated isolated Mg Ga acceptor energy level,are responsible for the blue emission of 438nm.Annealing partially recovered the crystalline structure,leading to the reappearance of the common yellow band.
%K GaN
%K doping
%K ion implantation
%K photoluminescence
%K Gaussian fit<br>氮化镓
%K 掺杂
%K 离子注入
%K 光致发光
%K 高斯拟合
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8CDDACBB57C45198&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=0B39A22176CE99FB&sid=EB552E4CFC85690B&eid=04445C1D2BDA24EE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=16