%0 Journal Article
%T Breakdown Protection Characteristics for F and N Implanted Ultra-Thin Gate Oxide<br>不同工艺超薄栅氧化层的抗击穿特性
%A Han Dedong
%A Zhang Guoqiang
%A Ren Diyuan
%A Lu Wu
%A Yan Rongliang
%A <br>韩德栋
%A 张国强
%A 任迪远
%A 陆妩
%A 严荣良
%J 半导体学报
%D 2002
%I 
%X The breakdown protection characteristics of fluorination and nitrification implanted ultra thin gate oxide are investigated.The experimental data show that F ions or N ions introduced into thermal SiO 2 oxide can improved its breakdown characteristics.F ions or N ions can decrease the oxide charges and interface states induced by process.The breakdown protection characteristics of the nitrification implanted thin gate oxide is better than the fluorination thin gate oxide.
%K different technology
%K ultra
%K thin gate oxide
%K breakdown characteristics<br>不同工艺
%K 超薄栅氧化层
%K 抗击穿特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9E5B85D5BD964013&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=CA4FD0336C81A37A&sid=67969BA850333433&eid=E44E40A2398D4F2A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=6