%0 Journal Article
%T Regrowing Characteristic of GaN on Etched Pits by MOCVD<br>腐蚀坑处氮化镓二次MOCVD外延生长的特性
%A Lu Min
%A Fang Huizhi
%A Lu Shu
%A Li Zilan
%A Yang Hua
%A Zhang Bei
%A Zhang Guoyi
%A <br>陆敏
%A 方慧智
%A 陆曙
%A 黎子兰
%A 杨华
%A 章蓓
%A 张国义
%J 半导体学报
%D 2004
%I 
%X GaN films etched in molten KOH are regrown for different hours.Scan electron microscope,X-ray diffraction,and photoluminence are applied to study the regrowing characteristics of the GaN in etched pits and nearly.The GaN film regrown for 2h has the lowest dislocation density and the best optical property.The slowly growing velocity in pits at early stage and the lateral growing at the edge of pits in late stage can restrain the propagation of pure screw threading dislocations.The asymmetrical regrowing characteristics on etch-pits will produce new edge threading dislocations and the connectivity of adjacent etch-pits can lessen edge threading dislocations.
%K MOCVD
%K GaN
%K threading dislocation<br>MOCVD
%K GaN
%K 穿透位错
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0E0E91F5BCC07974&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=E158A972A605785F&sid=BFB86B6ED3A99B9D&eid=6B3068A7C27BD349&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=12