%0 Journal Article
%T Static Induction Devices with Planar Type Buried Gate<br>平面型埋栅结构的静电感应晶体管(英文)
%A Wang Yongshun
%A Li Siyuan
%A Hu Dongqing
%A <br>王永顺
%A 李思渊
%A 胡冬青
%J 半导体学报
%D 2004
%I 
%X Based on the surface-gate and buried-gate structures,a novel buried-gate structure called the planar type buried-gate (PTBG) structure for static induction devices (SIDs) is proposed.An approach to realize a buried-gate type static induction transistor by conventional planar process technology is presented.Using this structure,it is successfully avoided the second epitaxy with a high degree of difficulty and the complicated mesa process in conventional buried gate.The experimental results demonstrate that this structure is desirable for application in power SIDs.Its advantages are high breakdown voltage and blocking gain.
%K static induction device
%K planar type buried gate structure
%K blocking voltage
%K limiting field ring<br>静电感应晶体管
%K 平面型埋栅结构
%K 阻断电压
%K 限场环
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=69D2D0C612CA6213&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=0B39A22176CE99FB&sid=6FBD78E3BAB60869&eid=7C72DBC13F2D71EC&journal_id=1674-4926&journal_name=半导体学报&referenced_num=5&reference_num=8