%0 Journal Article
%T Study of Hot-Carrier Effect in Short Channel DD MOSFET<br>NMOS短沟DD结构热载流子效应的研究
%A Yang Zhaomin/Institute of Microelectronics
%A Qinghua University
%A BeijingXu Jiasheng/Institute of Microelectronics
%A Qinghua University
%A Beijing
%A <br>杨肇敏
%A 徐葭生
%J 半导体学报
%D 1989
%I 
%X 本文描述制作和研究有效沟长为1μm的砷-磷双注入NMOS管(简称DD管).用工艺模拟和器件模拟程序计算和优化了工艺.实验结果与模拟结果完全一致,说明在相同有效沟道长度下DD结构比普通NMOS管的热载流子效应小.
%K Short channel DD MOSFET
%K hot-carrier effect<br>短沟
%K MOS管
%K 热载流子效应
%K NMOS
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C41ED1EDF745970D&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=DF92D298D3FF1E6E&sid=F176272DD933A0BB&eid=C4490A71BEB872FA&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=0