%0 Journal Article
%T A Novel Ultra-Thin Channel Poly-Si TFT Technology<br>多晶硅超薄沟道薄膜晶体管研制(英文)
%A ZHANG Sheng-dong
%A HAN Ru-Qi
%A GUAN Xu-dong
%A LIU Xiao-yan
%A WANG Yang-Yuan
%A <br>张盛东
%A 韩汝琦
%A 关旭东
%A 刘晓彦
%A 王阳元
%J 半导体学报
%D 2000
%I 
%X A novel low temperature poly\|Si(LTPS) ultra\|thin channel thin film transistor (UTC\|TFT) technology is proposed. The UTC\|TFT has an ultra\|thin channel region (30nm) and a thick drain/source region (300nm). The ultra\|thin channel region that can result in a lower grain\|boundary trap density in the channel is connected to the heavily\|doped thick drain/source region through a lightly\|doped overlapped region. The overlapped lightly\|doped region provides an effective way for the electric field to spread in the channel near the drain at high drain biases, thereby reducing the electric field there significantly. Simulation results show the UTC\|TFT experiences a 50% reduction in peak lateral electric field compared to that of the conventional TFT. With the low grain\|boundary trap density and low drain electric field, excellent current saturation characteristics and high drain breakdown voltage are achieved in the UTC\|TFT. Moreover, this technology provides the complementary LTPS\|TFTs with more than 2 times increase in on\|current, 3.5 times reduction in off\|current compared to the conventional thick channel LTPS TFTs.
%K TFT
%K poly-silicon
%K kink-effect
%K ultra-thin channel<br>薄膜晶体管
%K 多晶硅
%K kink效应
%K 超薄沟道
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C8454FCACA8EF262&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=E158A972A605785F&sid=E3094127AA4ABC1A&eid=90612DF06FCE4D55&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=16