%0 Journal Article
%T MEMS Class E Amplifier<br>MEMSE类放大器
%A 顾洪明
%A 吕苗
%A 梁春广
%A 高葆新
%J 半导体学报
%D 2003
%I 
%X A class E amplifier can be constructed using either bipolar transistor or MEMS switch.Because of the intrinsic properties of MEMS switch,the amplifier may easily get high efficiency and high power gain.This concept is demonstrated by prototype design and measurement.The measured results show that the mechanical amplifier can act as the active amplifier,with the amplifier efficiency agrees well with the simulation result,and the amplifier power gain tested as high as 2000.
%K MEMS
%K switch
%K class
%K E amplifier<br>MEMS
%K 开关
%K E类放大器
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=BA260E2955BC0EBD&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=E158A972A605785F&sid=238BD7580EFCC5AE&eid=EB58C3052341AAA3&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7