%0 Journal Article
%T Analysis and Realization of Nonvolatile Logic Circuits by Using Ferroelectric Technology<br>新型铁电不挥发性逻辑电路的分析和实现
%A Tang Tingao
%A Chen Dengyuan
%A Tang Xiangyun
%A Cheng Junxia
%A Yu Huihua
%A <br>汤庭鳌
%A 陈登元
%A 汤祥云
%A 程君侠
%A 虞惠华
%J 半导体学报
%D 2002
%I 
%X A new technology of realization of nonvolatile logic circuits by using ferroelectric thin film which is compatible with CMOS processing is presented.The correct circuit simulation and testing results for experimental latch circuit and flip flop circuit illustrate that the new technology of ferroelectric nonvolatile logic circuits is feasible.
%K logic circuit
%K nonvolatile
%K ferroelectric thin film<br>逻辑电路
%K 不挥发性
%K 铁电薄膜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9F60E6F322C3B689&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=708DD6B15D2464E8&sid=B4942BBE94415B36&eid=379827DA4720AA2A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7