%0 Journal Article
%T Radiation of SOI MOSFET with Shallow Source<br>源区浅结SOI MOSFET的辐照效应模拟
%A Zhao Hongchen
%A Hai Chaohe
%A Han Zhengsheng
%A Qian He
%A <br>赵洪辰
%A 海潮和
%A 韩郑生
%A 钱鹤
%J 半导体学报
%D 2004
%I 
%X The floating body effect of an asymmetric SOI MOSFET is studied.The total dose,SEU,and dose rate radiation effect of asymmetric SOI MOSFET with shallow source are simulated.The total dose radiation tolerance of its back channel can increase two order of magnitude more than its conventional counterpart.The total dose hardness is improved with the decrease of source depth.The SEU and dose rate hardness of asymmetric structure with body tie is better than that without body tie and conventional structure because of the suppress of floating body effect and the decrease of parasitic npn bipolar transistor.
%K shallow source
%K asymmetric SOI MOSFET
%K radiation<br>源区浅结
%K 不对称SOI
%K MOSFET
%K 辐照效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4A0B5C04CFB9ECA6&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=B31275AF3241DB2D&sid=B60458D1AE87BCD1&eid=3EE58D91F4253193&journal_id=1674-4926&journal_name=半导体学报&referenced_num=6&reference_num=8