%0 Journal Article
%T Damage and Secondary Defect Distribution and Carrier Profile of 150keV As~+-Implanted Silicon in <100> Channeling Direction<br>As~+沟道注入硅(100)的损伤、二次缺陷及载流子分布特征
%A Zhang Boxu/Institute of Low Energy Nuclear Physics
%A Beijing Normal UniversityLuo Yan/Institute of Low Energy Nuclear Physics
%A Beijing Normal UniversityWang Zhonglie/Institute of Low Energy Nuclear Physics
%A Beijing Normal University
%A <br>张伯旭
%A 罗晏
%A 王忠烈
%J 半导体学报
%D 1991
%I 
%X 用电容及电流DLTS方法测量了B~+、P~+离子注入掺硼p-Si中引进的空穴缺陷能级及其退火行为.在两种离子注入样品中都测到的空穴陷阱有七个,除了常见的辐照缺陷V.O.C受主H_4(0.35)、V.O.B复合团H_5(0.29)及V_2~+双空位单受主H_(72)(0.21)外,还测到其它四个能级H_0(0.56)、H_3(0.47)、H_6(0.25)、H_(73)(0.15).此外,在注B~+样品中还测到H_1(0.57)、H_2(0.53),在注P~+样品中有三个能级H_2~＇(0.61)H_(71)~＇(0.20)、H_8~＇(0.11),其中H_8~＇浓度很小.在600℃退火后,缺陷浓度均在10~(13)cm-~(-3)以下或者完全消失.与已有的工作比较,本文所测得的各种缺陷有较高的退火温度.
%K Channeling implantation
%K Critical dose
%K Damage
%K Secondary defects
%K Saturation carrier concentration<br>沟道注入
%K 硅
%K 二次缺陷
%K 载流子分布
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9687A7AB570B12122E544E50E231458A&yid=116CB34717B0B183&vid=59906B3B2830C2C5&iid=0B39A22176CE99FB&sid=117F81797AB182FC&eid=08805F9252973BA4&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=2