%0 Journal Article
%T Photoluminescence of Strained GaInAs/AlGaAs Quantum Well Structure<br>GaInAs/AlGaAs应变量子阱结构的荧光特性
%A WANG Xinghua/Institute of Semiconductors
%A Arademia Sinica
%A BeijingReino Laiho/Wihuri Physical Laboratory
%A University of Turku
%A Finland
%A <br>王杏华
%A Reino Laiho
%J 半导体学报
%D 1990
%I 
%X Photoluminescence in the temperature range of 4-300 K from a strained GaInAs/AlGaAsquantum well structure sample with well width of 20, 40, 90 and 130 A, respectively, is reported.Taking both the effect of the quantum size on subband energies of the caarriers and theenergy band-gap shifts with elastic strain into account,excitonic transition energies betweenn=1 electron state and heavy hole state in quantun wells are calculated. The calculated dataare.basically in agreement with the experimental results.The dependence of the photoluminescenceintensity on the width of the quantum wells and the full width at half maximum(FWHM) of the emission peaks at different temperatures have also been studied.
%K Photoluminescence
%K Strained GaInAs/AlGaAs quantum well<br>GaInAs
%K AlGaAs
%K 应变量子阱
%K 光荧光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=74813399C0EFD2E8&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=CA4FD0336C81A37A&sid=DF92D298D3FF1E6E&eid=FC0714F8D2EB605D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1