%0 Journal Article
%T A Short-Channel SOI MOSFET Model Considering Total Dose Effects<br>短沟道SOI MOSFET总剂量辐照效应模型
%A WAN Xin-heng
%A GAN Xue-wen
%A ZHANG Xing
%A HUANG Ru
%A WANG Yang-yuan
%A <br>万新恒
%A 甘学温
%A 张兴
%A 黄如
%A 王阳元
%J 半导体学报
%D 2001
%I 
%X A new approach is proposed to model the total dose effects on silicon-on-insulator (SOI) devices for the purpose of circuit simulation.The fully continuous compact SOI MOSFET model can automatically account for the correct body depletion condition,without assuming a priori charge partitioning or constant surface potential.It can also account for the transition between FD and PD behavior that occurs in the practical devices.The model is validated by the comparative result between the simulated and measured post-radiation device characteristics of thin-film SOI MOSFETs fabricated on SIMOX wafers.
%K SOI MOSFET
%K total dose effects
%K model<br>SOIMOSFET
%K 总剂量辐照效应
%K 模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=BFCC58BCB935E758&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=9CF7A0430CBB2DFD&sid=B8D8B337883846D1&eid=545EC3172B3789BC&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13