%0 Journal Article
%T High Performance VHF Power VDMOSFETs for Low Voltage Applications<br>低压应用的高性能甚高频功率VDMOSFETs(英文)
%A LIU Ying-kun
%A LIANG Chun-guang
%A DENG Jian-guo
%A ZHANG Ying-qiu
%A LANG Xiu-lan
%A LI Si-yuan
%A <br>刘英坤
%A 梁春广
%A 邓建国
%A 张颖秋
%A 郎秀兰
%A 李思渊
%J 半导体学报
%D 2001
%I 
%X A high performance VHF power VDMOSFET,ap plying to the mobile communications,is developed,which can deliver an output power of 12W with the drain efficiency of 70% as well as the gain of 12dB at a low supply voltage of 12V and 175MHz.It is fabricated by using the terraced gat e structure and refractory molybdenum (Mo) gate technology.
%K low voltage
%K terraced gate structure
%K Mo gate te chnology
%K VHF power VDMOSFET<br>低压
%K 梯形栅结构
%K 钼栅工艺
%K 甚高频功率VDMOSFET
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=1C9910096CD89A5F&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=5D311CA918CA9A03&sid=997CCAFE43D4D200&eid=32491EEEE0A8C927&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7