%0 Journal Article
%T A High Speed IGBT Based on Dynamic Controlled Anode-Short<br>具有动态控制阳极短路结构的高速IGBT(英文)
%A Yang Hongqiang
%A Chen Xingbi
%A <br>杨洪强
%A 陈星弼
%J 半导体学报
%D 2002
%I 
%X IGBT with high switching speed is described based on the dynamic controlled anode- short,which incorpo- rates a normally- on,p- MOSFET controlled by the anode voltage indirectly.This device works just as normal when it is in on- state since the channel of the p- MOSFET is pinched- off.During the course of turning off,the channel of the p- MOSFET will prevent the injection of m inorities and introduce an extra access for the carriers to flow to the anode directly,which m akes the IGBT reach its off- state in a shorter time.The simulation results prove that the new structure can reduce the turn- off time by m ore than75 % compared with the normal one under the same break- down voltage and on- state perform ance.Only two more resistors are needed when using this structure,and the re- quirement of the drive circuits is just the sam e as normal.
%K dynamic controlled anode- short
%K turn- off time
%K forward voltage drop<br>动态控制阳极短路
%K 关断时间
%K 导通压降
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=6B23B5C251D847C2&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=E158A972A605785F&sid=15251AE9C02726D3&eid=381FB4265090A8E0&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=2